Mobility of charge carriers in self-assembled monolayers

• Zhihua Fu,
• Tatjana Ladnorg,
• Hartmut Gliemann,
• Alexander Welle,
• Asif Bashir,
• Michael Rohwerder,
• Qiang Zhang,
• Björn Schüpbach,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2019, 10, 2449–2458, doi:10.3762/bjnano.10.235

• ). This observation reveals that the pristine PAT SAM exhibit ordered regimes in which the lateral conductivity is not affected by defects etc., and thus is substantially larger than the rectangular patterns created by AFM lithography. The presented preparation of PAT islands with arbitrary sizes and

• fairly large amount of defects in the islands formed by the exchange process. For larger island sizes such effects could limit the further increase of lateral conductivity. In contrast, the PAT islands used in this work essentially have the high structural quality of the original SAM, since we used AFM

• lithography to “insulate” them from the surroundings by grafting HDT onto the surface. As a result, conductive PAT islands with different sizes remain on the Au surface, separated by the insulating barriers consisting of HDT. It is an important benefit of this approach that the structure of the PAT molecules

Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

• Siti Noorhaniah Yusoh and
• Khatijah Aisha Yaacob

Beilstein J. Nanotechnol. 2016, 7, 1461–1470, doi:10.3762/bjnano.7.138

• important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different IPA concentrations (0, 10, 20, and 30 vol %) and etching time durations

• performance for many applications. Keywords: AFM lithography; isopropyl alcohol; silicon nanowires; tetramethylammonium hydroxide; wet etching; Introduction The fabrication of semiconductor devices on silicon-on-insulator (SOI) wafers has recently become popular. Devices necessary for meeting the

• have been a few studies on the TMAH/IPA anisotropic etching, but the studies have not investigated the etched product. In this paper, we studied TMAH/IPA wet etching for the fabrication of an array of silicon nanowire patterned by AFM lithography on an SOI wafer. We investigate the relationship between

Selective surface modification of lithographic silicon oxide nanostructures by organofunctional silanes

• Thomas Baumgärtel,
• Christian von Borczyskowski and
• Harald Graaf

Beilstein J. Nanotechnol. 2013, 4, 218–226, doi:10.3762/bjnano.4.22

• coverage of the dye molecules on length scale that is not accessible by standard AFM measurements. Keywords: AFM lithography; amino-functionalization; local anodic oxidation; octadecyl-trichlorosilane; silicon oxide nanostructures; Introduction Local anodic oxidation (LAO) nanolithography is a reliable